HXY MOSFET · FETs & Power MOSFETs · MPN SM6366ED1RL-HXY
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| Configuration | Standalone |
|---|---|
| Gate Charge(Qg) | 24nC@15V |
| Drain to Source Voltage | 30V |
| Output Capacitance(Coss) | 480pF |
| Current - Continuous Drain(Id) | 120A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 1.6V |
| Pd - Power Dissipation | 115W |
| Reverse Transfer Capacitance (Crss@Vds) | 340pF |
| RDS(on) | 2.6mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 2.218nF |
N-Channel 30V 120A 187W Surface Mount DFN5x6-8L