HXY MOSFET · FETs & Power MOSFETs · MPN SISS26DN-T1-GE3-HXY
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| Configuration | Standalone |
|---|---|
| Drain to Source Voltage | 60V |
| Gate Charge(Qg) | 35nC@10V |
| Current - Continuous Drain(Id) | 100A |
| Output Capacitance(Coss) | 735pF |
| Gate Threshold Voltage (Vgs(th)) | 1.7V |
| Pd - Power Dissipation | 73.5W |
| RDS(on) | 4mΩ@10V |
| Reverse Transfer Capacitance (Crss@Vds) | 42pF |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 2.18nF |
| Type | N-Channel |
60V 100A 1.7V 73.5W 4mΩ@10V 1 N-channel N-Channel DFN-8L(3x3) Single FETs, MOSFETs RoHS