HXY MOSFET · FETs & Power MOSFETs · MPN SISB46DN-T1-GE3-HXY
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| Configuration | Standalone |
|---|---|
| Gate Charge(Qg) | 5.8nC@4.5V |
| Drain to Source Voltage | 40V |
| Output Capacitance(Coss) | 193pF |
| Current - Continuous Drain(Id) | 40A |
| Gate Threshold Voltage (Vgs(th)) | 3V |
| Pd - Power Dissipation | 43.6W |
| Reverse Transfer Capacitance (Crss@Vds) | 38pF |
| RDS(on) | 7.2mΩ@10V |
| Number | 2 N-Channel |
| Input Capacitance(Ciss) | 690pF |
| Type | N-Channel |
N-Channel Array 40V 40A 43.6W Surface Mount DFN3x3-8L