HXY MOSFET · FETs & Power MOSFETs · MPN SISA34DN-T1-GE3-HXY
No reviews yet — be the first to review HXY MOSFET SISA34DN-T1-GE3-HXY.
| Output Capacitance(Coss) | 498pF |
|---|---|
| Pd - Power Dissipation | 30W |
| Configuration | Standalone |
| Gate Charge(Qg) | 8nC@4.5V |
| Drain to Source Voltage | 30V |
| Current - Continuous Drain(Id) | 40A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 2.5V |
| Reverse Transfer Capacitance (Crss@Vds) | 41pF |
| RDS(on) | 5mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 814pF |
30W 30V 40A 2.5V 5mΩ@10V 1 N-channel N-Channel DFN-8L(3x3) Single FETs, MOSFETs RoHS