HXY MOSFET · FETs & Power MOSFETs · MPN SIS429DNT-T1-GE3-HXY
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| Configuration | Standalone |
|---|---|
| Drain to Source Voltage | 30V |
| Gate Charge(Qg) | 22nC@10V |
| Current - Continuous Drain(Id) | 40A |
| Output Capacitance(Coss) | 183pF |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 1.6V |
| Pd - Power Dissipation | 15W |
| RDS(on) | 12mΩ@10V |
| Reverse Transfer Capacitance (Crss@Vds) | 156pF |
| Number | 1 P-Channel |
| Input Capacitance(Ciss) | 1.33nF |
30V 40A 1.6V 15W 12mΩ@10V 1 P-Channel P-Channel DFN-8L(3x3) Single FETs, MOSFETs RoHS