HXY MOSFET · FETs & Power MOSFETs · MPN SIS413DN-T1-GE3-HXY
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| Output Capacitance(Coss) | 346pF |
|---|---|
| Pd - Power Dissipation | 21.5W |
| Configuration | Standalone |
| Gate Charge(Qg) | 30nC@10V |
| Drain to Source Voltage | 30V |
| Current - Continuous Drain(Id) | 55A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 1.5V |
| Reverse Transfer Capacitance (Crss@Vds) | 319pF |
| RDS(on) | 8.5mΩ@10V |
| Number | 1 P-Channel |
| Input Capacitance(Ciss) | 2.8nF |
P-Channel 30V 55A 21.5W Surface Mount DFN-8L(3x3)