HXY MOSFET · FETs & Power MOSFETs · MPN SIS412DN-T1-GE3-HXY
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| Configuration | Standalone |
|---|---|
| Gate Charge(Qg) | 10nC@10V |
| Drain to Source Voltage | 30V |
| Output Capacitance(Coss) | 79pF |
| Current - Continuous Drain(Id) | 20A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 1.5V |
| Pd - Power Dissipation | 5.5W |
| Reverse Transfer Capacitance (Crss@Vds) | 61pF |
| RDS(on) | 15mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 490pF |
N-Channel 30V 20A 5.5W Surface Mount DFN-8L(3x3)