HXY MOSFET · FETs & Power MOSFETs · MPN SiS407DN-HXY
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| Configuration | Standalone |
|---|---|
| Gate Charge(Qg) | 35nC@4.5V |
| Drain to Source Voltage | 20V |
| Output Capacitance(Coss) | 690pF |
| Current - Continuous Drain(Id) | 30A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 700mV |
| Pd - Power Dissipation | 18W |
| Reverse Transfer Capacitance (Crss@Vds) | 590pF |
| RDS(on) | 12mΩ@4.5V |
| Number | 1 P-Channel |
| Input Capacitance(Ciss) | 2.8nF |
P-Channel 20V 30A 18W Surface Mount DFN-8L(3x3)