HXY MOSFET · FETs & Power MOSFETs · MPN SIRA01DP-T1-GE3-HXY
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| Configuration | Standalone |
|---|---|
| Gate Charge(Qg) | 146nC@10V |
| Drain to Source Voltage | 30V |
| Output Capacitance(Coss) | 695pF |
| Current - Continuous Drain(Id) | 90A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 1.6V |
| Pd - Power Dissipation | 60W |
| Reverse Transfer Capacitance (Crss@Vds) | 580pF |
| RDS(on) | 3.5mΩ@10V |
| Number | 1 P-Channel |
| Input Capacitance(Ciss) | 5.07nF |
30V 90A 1.6V 60W 3.5mΩ@10V 1 P-Channel P-Channel DFN-8L(5x6) Single FETs, MOSFETs RoHS