HXY MOSFET · FETs & Power MOSFETs · MPN SIR850DP-T1-GE3-HXY
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| Output Capacitance(Coss) | 310pF |
|---|---|
| Pd - Power Dissipation | 37W |
| Configuration | Standalone |
| Gate Charge(Qg) | 38nC@10V |
| Drain to Source Voltage | 30V |
| Current - Continuous Drain(Id) | 80A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 1.7V |
| Reverse Transfer Capacitance (Crss@Vds) | 260pF |
| RDS(on) | 4.7mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 1.93nF |
N-Channel 30V 80A 37W Surface Mount DFN5x6-8L