HXY MOSFET · FETs & Power MOSFETs · MPN SIR516DP-T1-RE3-HXY
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| Output Capacitance(Coss) | 736pF |
|---|---|
| Pd - Power Dissipation | 97W |
| Gate Charge(Qg) | 39.4nC@10V |
| Configuration | Standalone |
| Drain to Source Voltage | 100V |
| Current - Continuous Drain(Id) | 80A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 1.6V |
| RDS(on) | 6.4mΩ@10V |
| Reverse Transfer Capacitance (Crss@Vds) | 2.04pF |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 2.944nF |
97W 100V 80A 1.6V 6.4mΩ@10V 1 N-channel N-Channel DFN-8L(5x6) Single FETs, MOSFETs RoHS