HXY MOSFET · FETs & Power MOSFETs · MPN SIR401DP-T1-GE3-HXY
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| Configuration | Standalone |
|---|---|
| Gate Charge(Qg) | 149nC@4.5V |
| Drain to Source Voltage | 18V |
| Output Capacitance(Coss) | 1.67nF |
| Current - Continuous Drain(Id) | 80A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 600mV |
| Pd - Power Dissipation | 41.67W |
| Reverse Transfer Capacitance (Crss@Vds) | 730pF |
| RDS(on) | 2.5mΩ@4.5V |
| Number | 1 P-Channel |
| Input Capacitance(Ciss) | 12nF |
P-Channel 18V 80A 41.67W Surface Mount DFN5X6-8L