HXY MOSFET · FETs & Power MOSFETs · MPN SIHK100N65E-T1-GE3-HXY
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| Gate Charge(Qg) | 35.8nC |
|---|---|
| Configuration | - |
| Drain to Source Voltage | 650V |
| Output Capacitance(Coss) | 55pF |
| Current - Continuous Drain(Id) | 36A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 2.7V |
| Pd - Power Dissipation | 181W |
| Reverse Transfer Capacitance (Crss@Vds) | 7pF |
| RDS(on) | 150mΩ |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 767pF |
650V 36A 2.7V 181W 150mΩ 1 N-channel N-Channel TOLLS Single FETs, MOSFETs RoHS