HXY MOSFET · FETs & Power MOSFETs · MPN SIHH21N65EF-T1-GE3-HXY
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| Configuration | - |
|---|---|
| Gate Charge(Qg) | 17.6nC |
| Drain to Source Voltage | 800V |
| Output Capacitance(Coss) | 34pF |
| Current - Continuous Drain(Id) | 25A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 3V |
| Pd - Power Dissipation | 133W |
| Reverse Transfer Capacitance (Crss@Vds) | 3.5pF |
| RDS(on) | - |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 361pF |
800V 25A 3V 133W 1 N-channel N-Channel DFN-5B(8x8) Single FETs, MOSFETs RoHS