HXY MOSFET · FETs & Power MOSFETs · MPN SIHH14N65EF-T1-GE3-HXY
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| Configuration | - |
|---|---|
| Gate Charge(Qg) | 11.6nC |
| Drain to Source Voltage | 650V |
| Output Capacitance(Coss) | 22pF |
| Current - Continuous Drain(Id) | 14A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 2.7V |
| Pd - Power Dissipation | 75W |
| RDS(on) | - |
| Reverse Transfer Capacitance (Crss@Vds) | 3.2pF |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 184pF |
650V 14A 2.7V 75W 1 N-channel N-Channel DFN-5B(8x8) Single FETs, MOSFETs RoHS