HXY MOSFET · FETs & Power MOSFETs · MPN SIHA24N80AE-GE3-HXY
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| Configuration | - |
|---|---|
| Gate Charge(Qg) | 30.6nC |
| Drain to Source Voltage | 900V |
| Current - Continuous Drain(Id) | 24.9A |
| Output Capacitance(Coss) | 34.7pF |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Pd - Power Dissipation | 97W |
| RDS(on) | 200mΩ |
| Reverse Transfer Capacitance (Crss@Vds) | 3.4pF |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 511pF |
900V 24.9A 4V 97W 200mΩ 1 N-channel N-Channel TO-220F Single FETs, MOSFETs RoHS