HXY MOSFET · FETs & Power MOSFETs · MPN SICW020N065H-BP-HXY
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| Configuration | - |
|---|---|
| Gate Charge(Qg) | 142nC |
| Drain to Source Voltage | 650V |
| Current - Continuous Drain(Id) | 108A |
| Output Capacitance(Coss) | 221pF |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 2.6V |
| Pd - Power Dissipation | 341W |
| RDS(on) | 24mΩ |
| Reverse Transfer Capacitance (Crss@Vds) | 16.6pF |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 2.935nF |
650V 108A 2.6V 341W 24mΩ 1 N-channel N-Channel TO-247 Single FETs, MOSFETs RoHS