HXY MOSFET · FETs & Power MOSFETs · MPN SI9926CDY-T1-GE3-HXY
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| Configuration | Standalone |
|---|---|
| Gate Charge(Qg) | 10.5nC@4.5V |
| Drain to Source Voltage | 20V |
| Output Capacitance(Coss) | 120pF |
| Current - Continuous Drain(Id) | 8A |
| Gate Threshold Voltage (Vgs(th)) | 700mV |
| Pd - Power Dissipation | 2.25W |
| Reverse Transfer Capacitance (Crss@Vds) | 105pF |
| RDS(on) | 13mΩ@4.5V |
| Number | 2 N-Channel |
| Input Capacitance(Ciss) | 700pF |
| Type | N-Channel |
N-Channel Array 20V 8A 2.25W Surface Mount SOP-8