HXY MOSFET · FETs & Power MOSFETs · MPN SI7884BDP-T1-GE3-HXY
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| Configuration | Standalone |
|---|---|
| Drain to Source Voltage | 40V |
| Gate Charge(Qg) | 19.7nC@10V |
| Output Capacitance(Coss) | 1.509nF |
| Current - Continuous Drain(Id) | 55A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 1.8V |
| RDS(on) | 7.5mΩ@10V |
| Reverse Transfer Capacitance (Crss@Vds) | 129pF |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 6nF |
| Type | N-Channel |
40V 55A 1.8V 7.5mΩ@10V 1 N-channel N-Channel DFN-8L(5x6) Single FETs, MOSFETs RoHS