HXY MOSFET · FETs & Power MOSFETs · MPN Si7850DP-HXY
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| Configuration | Standalone |
|---|---|
| Gate Charge(Qg) | 12.6nC@4.5V |
| Drain to Source Voltage | 60V |
| Output Capacitance(Coss) | 86pF |
| Current - Continuous Drain(Id) | 30A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 2.5V |
| Pd - Power Dissipation | 34.7W |
| Reverse Transfer Capacitance (Crss@Vds) | 64pF |
| RDS(on) | 20mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 1.378nF |
N-Channel 60V 30A 34.7W Surface Mount DFN5x6-8L