HXY MOSFET · FETs & Power MOSFETs · MPN SI7748DP-T1-GE3-HXY
No reviews yet — be the first to review HXY MOSFET SI7748DP-T1-GE3-HXY.
| Output Capacitance(Coss) | 480pF |
|---|---|
| Pd - Power Dissipation | 115W |
| Configuration | Standalone |
| Gate Charge(Qg) | 24nC@15V |
| Drain to Source Voltage | 30V |
| Current - Continuous Drain(Id) | 120A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 1.6V |
| RDS(on) | 2.6mΩ@10V |
| Reverse Transfer Capacitance (Crss@Vds) | 340pF |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 2.218nF |
115W 30V 120A 1.6V 2.6mΩ@10V 1 N-channel N-Channel DFN-8L(5x6) Single FETs, MOSFETs RoHS