HXY MOSFET · FETs & Power MOSFETs · MPN SI7617DN-T1-GE3-HXY
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| Configuration | Standalone |
|---|---|
| Gate Charge(Qg) | 12.5nC@4.5V |
| Drain to Source Voltage | 30V |
| Current - Continuous Drain(Id) | 32A |
| Output Capacitance(Coss) | 194pF |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 1.95V |
| Pd - Power Dissipation | 3.57W |
| Reverse Transfer Capacitance (Crss@Vds) | 158pF |
| RDS(on) | 10mΩ@10V |
| Number | 1 P-Channel |
| Input Capacitance(Ciss) | 1.345nF |
30V 32A 1.95V 3.57W 10mΩ@10V 1 P-Channel P-Channel DFN-8(3x3) Single FETs, MOSFETs RoHS