HXY MOSFET · FETs & Power MOSFETs · MPN SI7308DN-T1-E3-HXY
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| Configuration | Standalone |
|---|---|
| Gate Charge(Qg) | 20.3nC@10V |
| Drain to Source Voltage | 60V |
| Output Capacitance(Coss) | 58.5pF |
| Current - Continuous Drain(Id) | 15A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 1.6V |
| Pd - Power Dissipation | 34.7W |
| Reverse Transfer Capacitance (Crss@Vds) | 49.4pF |
| RDS(on) | 28mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 1.148nF |
N-Channel 60V 20A 34.7W Surface Mount DFN3x3-8L