HXY MOSFET · FETs & Power MOSFETs · MPN SI7216DN-T1-E3-HXY
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| Configuration | Standalone |
|---|---|
| Gate Charge(Qg) | 9.8nC@4.5V |
| Drain to Source Voltage | 40V |
| Output Capacitance(Coss) | 107pF |
| Current - Continuous Drain(Id) | 20A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 1.6V |
| Pd - Power Dissipation | 3W |
| Reverse Transfer Capacitance (Crss@Vds) | 76pF |
| RDS(on) | 16mΩ@10V |
| Number | 2 N-Channel |
| Input Capacitance(Ciss) | 1.013nF |
N-Channel Array 40V 20A 3W Surface Mount DFN3x3-8L