HXY MOSFET · FETs & Power MOSFETs · MPN SI7121DN-T1-GE3-HXY
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| Configuration | Standalone |
|---|---|
| Gate Charge(Qg) | 52nC@4.5V |
| Drain to Source Voltage | 30V |
| Output Capacitance(Coss) | 150pF |
| Current - Continuous Drain(Id) | 25A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 2.5V |
| Pd - Power Dissipation | 29W |
| Reverse Transfer Capacitance (Crss@Vds) | 134pF |
| RDS(on) | 16mΩ@10V |
| Number | 1 P-Channel |
| Input Capacitance(Ciss) | 1.15nF |
P-Channel 30V 25A 29W Surface Mount DFN-8L(3x3)