HXY MOSFET · FETs & Power MOSFETs · MPN SI7111EDN-T1-GE3-HXY
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| Output Capacitance(Coss) | 529pF |
|---|---|
| Pd - Power Dissipation | 31.2W |
| Configuration | Standalone |
| Gate Charge(Qg) | 45nC@10V |
| Drain to Source Voltage | 30V |
| Current - Continuous Drain(Id) | 70A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 1.6V |
| RDS(on) | 6.5mΩ@10V |
| Reverse Transfer Capacitance (Crss@Vds) | 487pF |
| Number | 1 P-Channel |
| Input Capacitance(Ciss) | 4.32nF |
31.2W 30V 70A 1.6V 6.5mΩ@10V 1 P-Channel P-Channel DFN-8L(3x3) Single FETs, MOSFETs RoHS