HXY MOSFET · FETs & Power MOSFETs · MPN SI7108DN-T1-GE3-HXY
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| Configuration | Standalone |
|---|---|
| Gate Charge(Qg) | 32nC@4.5V |
| Drain to Source Voltage | 20V |
| Output Capacitance(Coss) | 407pF |
| Current - Continuous Drain(Id) | 60A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 700mV |
| Pd - Power Dissipation | 15W |
| Reverse Transfer Capacitance (Crss@Vds) | 386pF |
| RDS(on) | 4mΩ@4.5V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 2.5nF |
N-Channel 20V 60A 15W Surface Mount DFN3x3-8L