HXY MOSFET · FETs & Power MOSFETs · MPN SI4936BDY-T1-GE3-HXY
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| Configuration | Standalone |
|---|---|
| Drain to Source Voltage | 30V |
| Gate Charge(Qg) | 5.2nC@10V |
| Current - Continuous Drain(Id) | 6A |
| Output Capacitance(Coss) | 45pF |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 1.8V |
| Pd - Power Dissipation | 2W |
| RDS(on) | 25mΩ@10V |
| Reverse Transfer Capacitance (Crss@Vds) | 35pF |
| Number | 2 N-Channel |
| Input Capacitance(Ciss) | 255pF |
30V 6A 1.8V 2W 25mΩ@10V 2 N-Channel N-Channel SOP-8 Single FETs, MOSFETs RoHS