HXY MOSFET · FETs & Power MOSFETs · MPN SI4936ADY-T1-E3-HXY
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| Configuration | Standalone |
|---|---|
| Gate Charge(Qg) | 5.2nC@10V |
| Drain to Source Voltage | 30V |
| Output Capacitance(Coss) | 45pF |
| Current - Continuous Drain(Id) | 6A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 1.8V |
| Pd - Power Dissipation | 2W |
| Reverse Transfer Capacitance (Crss@Vds) | 35pF |
| RDS(on) | 25mΩ@10V |
| Number | 2 N-Channel |
| Input Capacitance(Ciss) | 255pF |
N-Channel Array 30V 9A 2W Surface Mount SOP-8