HXY MOSFET · FETs & Power MOSFETs · MPN SI4835DDY-T1-GE3-HXY
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| Output Capacitance(Coss) | 183pF |
|---|---|
| Pd - Power Dissipation | 3.7W |
| Configuration | Standalone |
| Gate Charge(Qg) | 22nC@10V |
| Drain to Source Voltage | 30V |
| Current - Continuous Drain(Id) | 11A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 1.6V |
| Reverse Transfer Capacitance (Crss@Vds) | 156pF |
| RDS(on) | 13mΩ@10V |
| Number | 1 P-Channel |
| Input Capacitance(Ciss) | 1.33nF |
P-Channel 30V 11A 3.7W Surface Mount SOP-8