HXY MOSFET · FETs & Power MOSFETs · MPN SI4559ADY-HXY
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| Output Capacitance(Coss) | 58.5pF |
|---|---|
| Pd - Power Dissipation | 2.5W |
| Configuration | Standalone |
| Gate Charge(Qg) | 20.3nC@10V |
| Drain to Source Voltage | 60V |
| Current - Continuous Drain(Id) | 6A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 1.6V |
| Reverse Transfer Capacitance (Crss@Vds) | 49.4pF |
| RDS(on) | 40mΩ@10V |
| Number | 1 N-Channel + 1 P-Channel |
| Input Capacitance(Ciss) | 1.148nF |
N-Channel+P-Channel Array 60V 6A 2.5W Surface Mount SOP-8