HXY MOSFET · FETs & Power MOSFETs · MPN SI4461DY-T1-GE3-HXY
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| Configuration | Standalone |
|---|---|
| Drain to Source Voltage | 30V |
| Gate Charge(Qg) | 35nC@10V |
| Current - Continuous Drain(Id) | 15A |
| Output Capacitance(Coss) | 400pF |
| Gate Threshold Voltage (Vgs(th)) | 1.6V |
| Pd - Power Dissipation | 25.6W |
| RDS(on) | 7.5mΩ@10V |
| Reverse Transfer Capacitance (Crss@Vds) | 360pF |
| Number | 1 P-Channel |
| Input Capacitance(Ciss) | 3.36nF |
| Type | P-Channel |
30V 15A 1.6V 25.6W 7.5mΩ@10V 1 P-Channel P-Channel SOP-8 Single FETs, MOSFETs RoHS