HXY MOSFET · FETs & Power MOSFETs · MPN SI4447DY-T1-E3-HXY
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| Output Capacitance(Coss) | 190pF |
|---|---|
| Pd - Power Dissipation | 3W |
| Configuration | Standalone |
| Gate Charge(Qg) | 35nC@10V |
| Drain to Source Voltage | 40V |
| Current - Continuous Drain(Id) | 13A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 1.5V |
| Reverse Transfer Capacitance (Crss@Vds) | 172pF |
| RDS(on) | 14mΩ@10V |
| Number | 1 P-Channel |
| Input Capacitance(Ciss) | 2.525nF |
P-Channel 40V 13A 3W Surface Mount SOP-8