HXY MOSFET · FETs & Power MOSFETs · MPN SI4425DY-HXY
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| Configuration | Standalone |
|---|---|
| Gate Charge(Qg) | 22nC@10V |
| Drain to Source Voltage | 30V |
| Current - Continuous Drain(Id) | 12A |
| Output Capacitance(Coss) | 233pF |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 1.6V |
| Pd - Power Dissipation | 2.5W |
| Reverse Transfer Capacitance (Crss@Vds) | 206pF |
| RDS(on) | 10mΩ@10V |
| Number | 1 P-Channel |
| Input Capacitance(Ciss) | 1.77nF |
30V 12A 1.6V 2.5W 10mΩ@10V 1 P-Channel P-Channel SOP-8 Single FETs, MOSFETs RoHS