HXY MOSFET · FETs & Power MOSFETs · MPN SI2367DS-T1-BE3-HXY
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| Configuration | Standalone |
|---|---|
| Drain to Source Voltage | 20V |
| Gate Charge(Qg) | 7.8nC@4.5V |
| Output Capacitance(Coss) | 290pF |
| Current - Continuous Drain(Id) | 4.2A |
| Gate Threshold Voltage (Vgs(th)) | 700mV |
| Pd - Power Dissipation | 1.7W |
| RDS(on) | 48mΩ@4.5V |
| Reverse Transfer Capacitance (Crss@Vds) | 190pF |
| Number | 1 P-Channel |
| Input Capacitance(Ciss) | 740pF |
| Type | P-Channel |
20V 4.2A 700mV 1.7W 48mΩ@4.5V 1 P-Channel P-Channel SOT-23 Single FETs, MOSFETs RoHS