HXY MOSFET · FETs & Power MOSFETs · MPN SI2336DS-T1-GE3-HXY
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| Configuration | Standalone |
|---|---|
| Drain to Source Voltage | 30V |
| Gate Charge(Qg) | 4.6nC@4.5V |
| Current - Continuous Drain(Id) | 5A |
| Output Capacitance(Coss) | 49pF |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 1.2V |
| Pd - Power Dissipation | 1W |
| RDS(on) | 33mΩ@10V |
| Reverse Transfer Capacitance (Crss@Vds) | 35pF |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 310pF |
30V 5A 1.2V 1W 33mΩ@10V 1 N-channel N-Channel SOT-23 Single FETs, MOSFETs RoHS