HXY MOSFET · FETs & Power MOSFETs · MPN Si2333DS-HXY
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| Output Capacitance(Coss) | 165pF |
|---|---|
| Pd - Power Dissipation | 1.4W |
| Configuration | Standalone |
| Gate Charge(Qg) | 12nC@4.5V |
| Drain to Source Voltage | 20V |
| Current - Continuous Drain(Id) | 5A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 550mV |
| Reverse Transfer Capacitance (Crss@Vds) | 120pF |
| RDS(on) | 30mΩ@4.5V |
| Number | 1 P-Channel |
| Input Capacitance(Ciss) | 950pF |
P-Channel 20V 5A 1.4W Surface Mount SOT-23