HXY MOSFET · FETs & Power MOSFETs · MPN SI2333-HXY
No reviews yet — be the first to review HXY MOSFET SI2333-HXY.
| Configuration | Standalone |
|---|---|
| Gate Charge(Qg) | 7.8nC@4.5V |
| Drain to Source Voltage | 20V |
| Output Capacitance(Coss) | 450pF |
| Current - Continuous Drain(Id) | 7A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 700mV |
| Pd - Power Dissipation | 2W |
| Reverse Transfer Capacitance (Crss@Vds) | 250pF |
| RDS(on) | 20mΩ@4.5V |
| Number | 1 P-Channel |
| Input Capacitance(Ciss) | 980pF |
P-Channel 18V 6.5A 2W Surface Mount SOT-23