HXY MOSFET · FETs & Power MOSFETs · MPN Si2328DS-T1-GE3-HXY
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| Output Capacitance(Coss) | 25.9pF |
|---|---|
| Pd - Power Dissipation | 1W |
| Configuration | Standalone |
| Gate Charge(Qg) | 4.3nC@10V |
| Drain to Source Voltage | 100V |
| Current - Continuous Drain(Id) | 5A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 1.95V |
| Reverse Transfer Capacitance (Crss@Vds) | 21.4pF |
| RDS(on) | 95mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 196pF |
N-Channel 100V 5A 1W Surface Mount SOT-23-3L