HXY MOSFET SI2323

HXY MOSFET · FETs & Power MOSFETs · MPN SI2323

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Specifications

ConfigurationStandalone
Gate Charge(Qg)10.2nC@4.5V
Drain to Source Voltage20V
Output Capacitance(Coss)114pF
Current - Continuous Drain(Id)5A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1V
Pd - Power Dissipation1.31W
Reverse Transfer Capacitance (Crss@Vds)108pF
RDS(on)35mΩ@4.5V
Number1 P-Channel
Input Capacitance(Ciss)857pF

Technical details

P-Channel 20V 5A 1.31W Surface Mount SOT-23

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