HXY MOSFET · FETs & Power MOSFETs · MPN SI2312BDS-T1-BE3-HXY
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| Configuration | Standalone |
|---|---|
| Drain to Source Voltage | 20V |
| Gate Charge(Qg) | 2.9nC@4.5V |
| Current - Continuous Drain(Id) | 3A |
| Output Capacitance(Coss) | 48pF |
| Gate Threshold Voltage (Vgs(th)) | 750mV |
| Pd - Power Dissipation | 900mW |
| Reverse Transfer Capacitance (Crss@Vds) | 27pF |
| RDS(on) | 23mΩ@4.5V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 260pF |
| Type | N-Channel |
20V 3A 750mV 900mW 23mΩ@4.5V 1 N-channel N-Channel SOT-23 Single FETs, MOSFETs RoHS