HXY MOSFET SI2303

HXY MOSFET · FETs & Power MOSFETs · MPN SI2303

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Specifications

ConfigurationStandalone
Gate Charge(Qg)5.22nC@4.5V
Drain to Source Voltage30V
Output Capacitance(Coss)82pF
Current - Continuous Drain(Id)4.1A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1.5V
Pd - Power Dissipation1.32W
Reverse Transfer Capacitance (Crss@Vds)68pF
RDS(on)48mΩ@10V
Number1 P-Channel
Input Capacitance(Ciss)463pF

Technical details

P-Channel 30V 4.1A 1.32W Surface Mount SOT-23

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