HXY MOSFET · FETs & Power MOSFETs · MPN SI1317DL-T1-GE3-HXY
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| Configuration | Standalone |
|---|---|
| Drain to Source Voltage | 20V |
| Output Capacitance(Coss) | 130pF |
| Current - Continuous Drain(Id) | 1.8A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 700mV |
| Pd - Power Dissipation | 290mW |
| Reverse Transfer Capacitance (Crss@Vds) | 95pF |
| RDS(on) | 150mΩ@4.5V |
| Number | 1 P-Channel |
| Input Capacitance(Ciss) | 680pF |
| Type | P-Channel |
20V 1.8A 700mV 290mW 150mΩ@4.5V 1 P-Channel P-Channel SOT-323 Single FETs, MOSFETs RoHS