HXY MOSFET · FETs & Power MOSFETs · MPN SH8J65TB1-HXY
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| Configuration | Standalone |
|---|---|
| Drain to Source Voltage | 30V |
| Gate Charge(Qg) | 12.6nC@4.5V |
| Current - Continuous Drain(Id) | 8.5A |
| Output Capacitance(Coss) | 194pF |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 2.5V |
| Pd - Power Dissipation | 1.5W |
| RDS(on) | 14mΩ@10V |
| Reverse Transfer Capacitance (Crss@Vds) | 158pF |
| Number | 2 P-Channel |
| Input Capacitance(Ciss) | 1.345nF |
P-Channel 30V 11A Surface Mount SOP-8