HXY MOSFET · FETs & Power MOSFETs · MPN SC013N120TCL-HXY
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| Gate Charge(Qg) | 216nC |
|---|---|
| Drain to Source Voltage | 1.2kV |
| Current - Continuous Drain(Id) | 167A |
| Output Capacitance(Coss) | 239pF |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 2.9V |
| Pd - Power Dissipation | 555W |
| Reverse Transfer Capacitance (Crss@Vds) | 29pF |
| RDS(on) | 13mΩ |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 3.815nF |
| Type | N-Channel |
1.2kV 167A 2.9V 555W 13mΩ 1 N-channel N-Channel TO-247-4L Single FETs, MOSFETs RoHS