HXY MOSFET RSD140P06-HXY

HXY MOSFET · FETs & Power MOSFETs · MPN RSD140P06-HXY

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Specifications

Output Capacitance(Coss)100pF
Pd - Power Dissipation25W
ConfigurationStandalone
Gate Charge(Qg)6.1nC@4.5V
Drain to Source Voltage60V
Current - Continuous Drain(Id)20A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))2.5V
Reverse Transfer Capacitance (Crss@Vds)85pF
RDS(on)48mΩ@10V
Number1 P-Channel
Input Capacitance(Ciss)585pF

Technical details

P-Channel 60V 20A 25W Surface Mount TO-252-2L

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