HXY MOSFET · FETs & Power MOSFETs · MPN RFP50N06-HXY
No reviews yet — be the first to review HXY MOSFET RFP50N06-HXY.
| Configuration | Standalone |
|---|---|
| Drain to Source Voltage | 60V |
| Gate Charge(Qg) | 39nC@10V |
| Output Capacitance(Coss) | 430pF |
| Current - Continuous Drain(Id) | 60A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Pd - Power Dissipation | 120W |
| Reverse Transfer Capacitance (Crss@Vds) | 110pF |
| RDS(on) | 12mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 4.05nF |
60V 60A 120W Through Hole TO-220C