HXY MOSFET · FETs & Power MOSFETs · MPN RD3P100SNFRATL-HXY
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| Configuration | Standalone |
|---|---|
| Gate Charge(Qg) | 4.3nC@10V |
| Drain to Source Voltage | 100V |
| Output Capacitance(Coss) | 25.9pF |
| Current - Continuous Drain(Id) | 12A |
| Gate Threshold Voltage (Vgs(th)) | 1.8V |
| Pd - Power Dissipation | 17W |
| RDS(on) | 95mΩ@10V |
| Reverse Transfer Capacitance (Crss@Vds) | 21.4pF |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 196pF |
| Type | N-Channel |
100V 12A 1.8V 17W 95mΩ@10V 1 N-channel N-Channel TO-252-2L Single FETs, MOSFETs RoHS