HXY MOSFET RD3P100SNFRATL-HXY

HXY MOSFET · FETs & Power MOSFETs · MPN RD3P100SNFRATL-HXY

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Specifications

ConfigurationStandalone
Gate Charge(Qg)4.3nC@10V
Drain to Source Voltage100V
Output Capacitance(Coss)25.9pF
Current - Continuous Drain(Id)12A
Gate Threshold Voltage (Vgs(th))1.8V
Pd - Power Dissipation17W
RDS(on)95mΩ@10V
Reverse Transfer Capacitance (Crss@Vds)21.4pF
Number1 N-channel
Input Capacitance(Ciss)196pF
TypeN-Channel

Technical details

100V 12A 1.8V 17W 95mΩ@10V 1 N-channel N-Channel TO-252-2L Single FETs, MOSFETs RoHS

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