HXY MOSFET · FETs & Power MOSFETs · MPN RD3L08BBLHRBTL-HXY
No reviews yet — be the first to review HXY MOSFET RD3L08BBLHRBTL-HXY.
| Configuration | Standalone |
|---|---|
| Drain to Source Voltage | 60V |
| Gate Charge(Qg) | 66.1nC@10V |
| Output Capacitance(Coss) | 1.666nF |
| Current - Continuous Drain(Id) | 130A |
| Gate Threshold Voltage (Vgs(th)) | 1.6V |
| Pd - Power Dissipation | 140W |
| Reverse Transfer Capacitance (Crss@Vds) | 77.7pF |
| RDS(on) | 3mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 5.377nF |
| Type | N-Channel |
60V 130A 1.6V 140W 3mΩ@10V 1 N-channel N-Channel TO-252-2L Single FETs, MOSFETs RoHS