HXY MOSFET · FETs & Power MOSFETs · MPN PMV100XPEA215-HXY
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| Configuration | Standalone |
|---|---|
| Drain to Source Voltage | 20V |
| Gate Charge(Qg) | 2.9nC@4.5V |
| Current - Continuous Drain(Id) | 3A |
| Output Capacitance(Coss) | 58pF |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 700mV |
| Pd - Power Dissipation | 700mW |
| RDS(on) | 100mΩ@4.5V |
| Reverse Transfer Capacitance (Crss@Vds) | 32pF |
| Number | 1 P-Channel |
| Input Capacitance(Ciss) | 285pF |
20V 3A 700mV 700mW 100mΩ@4.5V 1 P-Channel P-Channel SOT-23 Single FETs, MOSFETs RoHS